Infineon IKW40N65ES5XKSA1 IGBT, 79 A 650 V, 3-Pin PG-TO-247
- RS Stock No.:
- 260-5100
- Mfr. Part No.:
- IKW40N65ES5XKSA1
- Manufacturer:
- Infineon
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- 150 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | HK$27.543 | HK$826.29 |
| 120 + | HK$26.443 | HK$793.29 |
*price indicative
- RS Stock No.:
- 260-5100
- Mfr. Part No.:
- IKW40N65ES5XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 79A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 230W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Operating Temperature | 175°C | |
| Series | IKW | |
| Width | 16.13mm | |
| Standards/Approvals | JEDEC | |
| Length | 42mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 79A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 230W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Operating Temperature 175°C | ||
Series IKW | ||
Width 16.13mm | ||
Standards/Approvals JEDEC | ||
Length 42mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
Infineon IKW Series IGBT, 79A Maximum Continuous Collector Current, 230W Maximum Power Dissipation - IKW40N65ES5XKSA1
This IGBT is a three‑pin power transistor designed for high‑power switching in industrial contexts. It operates across a wide temperature range and conforms to established semiconductor testing standards, providing a straightforward solution for applications that require substantial current handling and appreciable thermal dissipation capability.
Features and Benefits:
• 79A collector current enabling sustained high‑load operation
• 230W power dissipation supporting significant thermal throughput
• 650V gate‑emitter voltage tolerance allowing high‑voltage switching
• 1.35V VCE(sat) reducing conduction losses during Active modes
• -40 to 175°C rated temperature range permitting use in harsh environments
• 230W power dissipation supporting significant thermal throughput
• 650V gate‑emitter voltage tolerance allowing high‑voltage switching
• 1.35V VCE(sat) reducing conduction losses during Active modes
• -40 to 175°C rated temperature range permitting use in harsh environments
Applications
• Suitable for motor drive assemblies requiring high current
• Used with inverter stages in industrial power converters
• Ideal for switching elements in renewable‑energy inverters
• Can be used for high‑power UPS and industrial power-supply systems
• Used with inverter stages in industrial power converters
• Ideal for switching elements in renewable‑energy inverters
• Can be used for high‑power UPS and industrial power-supply systems
What package does it use for mounting compatibility?
It is supplied in a PG‑TO‑247 package that suits standard TO‑247 heatsinking and mounting arrangements.
How many electrical connections are present for circuit integration?
The device provides three pins for gate, collector and emitter connections in a typical transistor configuration.
Which approval indicates standardised test recognition?
It holds JEDEC approval confirming adherence to common semiconductor test criteria.
What is the maximum collector‑emitter saturation voltage under load?
The maximum VCE(sat) specified is 1.35V, which indicates the expected conduction drop during on‑state operation.
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