Infineon IGBT, 15 A 650 V TO-263
- RS Stock No.:
- 258-0982
- Mfr. Part No.:
- IGB15N65S5ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 258-0982
- Mfr. Part No.:
- IGB15N65S5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 15A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 105W | |
| Package Type | TO-263 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 15A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 105W | ||
Package Type TO-263 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon 650 V, 15 A high speed switching TRENCHSTOP 5 in D2Pak package single IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
No need for gate clamping components
Gate drivers with Miller clamping not required
Reduction in the EMI filtering needed
Excellent for paralleling
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