Infineon IGBT Module 650 V, Through Hole
- RS Stock No.:
- 248-1195
- Mfr. Part No.:
- DF200R07W2H3B77BPSA1
- Manufacturer:
- Infineon
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Subtotal (1 tray of 15 units)*
HK$6,186.795
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- Shipping from 22 May 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 15 - 15 | HK$412.453 | HK$6,186.80 |
| 30 - 30 | HK$404.20 | HK$6,063.00 |
| 45 + | HK$396.113 | HK$5,941.70 |
*price indicative
- RS Stock No.:
- 248-1195
- Mfr. Part No.:
- DF200R07W2H3B77BPSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation Pd | 20mW | |
| Mount Type | Through Hole | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 150°C | |
| Series | DF200R07W2H3B77 | |
| Width | 48 mm | |
| Length | 56.7mm | |
| Height | 12mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation Pd 20mW | ||
Mount Type Through Hole | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 150°C | ||
Series DF200R07W2H3B77 | ||
Width 48 mm | ||
Length 56.7mm | ||
Height 12mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device has Booster configuration and uses IGBT HighSpeed 3 technology.
Best cost-performance ratio with reduced system costs
High degree of freedom in design
Highest efficiency and power density
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