Infineon DF300R07W2H3B77BPSA1 IGBT Module 650 V, Through Hole
- RS Stock No.:
- 248-1198
- Mfr. Part No.:
- DF300R07W2H3B77BPSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
HK$540.00
FREE delivery for orders over HK$250.00
In Stock
- 7 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | HK$540.00 |
| 2 - 5 | HK$527.00 |
| 6 - 7 | HK$514.40 |
| 8 - 11 | HK$502.10 |
| 12 + | HK$490.00 |
*price indicative
- RS Stock No.:
- 248-1198
- Mfr. Part No.:
- DF300R07W2H3B77BPSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation Pd | 20mW | |
| Mount Type | Through Hole | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Series | DF300R07W2H3_B77 | |
| Standards/Approvals | RoHS | |
| Length | 56.7mm | |
| Height | 12mm | |
| Width | 42.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation Pd 20mW | ||
Mount Type Through Hole | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Series DF300R07W2H3_B77 | ||
Standards/Approvals RoHS | ||
Length 56.7mm | ||
Height 12mm | ||
Width 42.5 mm | ||
Automotive Standard No | ||
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device has Booster configuration and uses IGBT HighSpeed 3 technology.
Best cost-performance ratio with reduced system costs
High degree of freedom in design
Highest efficiency and power density
Related links
- Infineon DF300R07W2H3B77BPSA1 IGBT Module 90 A 650 V
- Infineon DF200R07W2H3B77BPSA1 IGBT Module 70 A 650 V
- Infineon F3L100R07W2H3B11BPSA1 IGBT Module, 70 A 650 V
- Infineon DDB6U50N22W1RPB11BPSA1 IGBT Module 23-Pin, PCB Mount
- Infineon IKW75N65EH5XKSA1 IGBT 3-Pin PG-TO247-3
- Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3
- Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
- Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B