Infineon FZ900R12KE4HOSA1 IGBT Module, 900 A 1200 V
- RS Stock No.:
- 244-5889
- Mfr. Part No.:
- FZ900R12KE4HOSA1
- Manufacturer:
- Infineon
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HK$1,397.70
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Units | Per unit |
|---|---|
| 1 - 1 | HK$1,397.70 |
| 2 - 2 | HK$1,369.80 |
| 3 - 3 | HK$1,342.40 |
| 4 + | HK$1,315.50 |
*price indicative
- RS Stock No.:
- 244-5889
- Mfr. Part No.:
- FZ900R12KE4HOSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 900A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 4300W | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | UL approved(E83335) | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 900A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 4300W | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals UL approved(E83335) | ||
Automotive Standard No | ||
Infineon IGBT Module, 1200V Max Collector Emitter Voltage, 900A Max Continuous Collector Current - FZ900R12KE4HOSA1
This IGBT module is a high-voltage switching device designed for demanding power-conversion tasks in industrial environments. It provides robust switching at elevated temperatures and supports heavy continuous currents, making it suitable for applications requiring substantial power handling and thermal endurance.
Features and Benefits:
• 1200 V maximum collector-emitter rating enables high-voltage switching capability
• 900 A continuous collector current supports sustained high-current operation
• 4300 W maximum power dissipation allows intensive power handling
• 2.1 V collector-emitter saturation reduces conduction losses
• 20 V maximum gate-emitter rating ensures controlled gate-drive margins
• Operates from −40 °C up to 150 °C for wide thermal-range performance
• 900 A continuous collector current supports sustained high-current operation
• 4300 W maximum power dissipation allows intensive power handling
• 2.1 V collector-emitter saturation reduces conduction losses
• 20 V maximum gate-emitter rating ensures controlled gate-drive margins
• Operates from −40 °C up to 150 °C for wide thermal-range performance
Applications
• Suitable for high-power industrial 1200 V converters and inverters
• Ideal for traction drives requiring a 900 A power-transistor module
• Used with power supplies needing low-saturation-voltage switching
• Can be used for motor drives operating across wide temperatures
• Appropriate for heavy-duty DC-DC conversion in industrial systems
• Ideal for traction drives requiring a 900 A power-transistor module
• Used with power supplies needing low-saturation-voltage switching
• Can be used for motor drives operating across wide temperatures
• Appropriate for heavy-duty DC-DC conversion in industrial systems
What safety or approvals does it carry for industrial use?
It is UL listed under approval E83335, which confirms third-party electrical-safety assessment.
What gate voltage limitations must be observed during driving?
The gate-emitter voltage must not exceed 20 V to prevent device damage.
How does thermal range affect deployment locations?
The part continues to function from −40 °C to 150 °C, allowing placement in both cold-start and high-temperature enclosures.
What is the significance of its power-dissipation rating?
The 4300 W dissipation indicates the maximum thermal energy it can handle under specified cooling conditions and informs cooling-system design.
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