Infineon IKFW60N60DH3EXKSA1, Type N-Channel IGBT Single Transistor IC, 53 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6661
- Mfr. Part No.:
- IKFW60N60DH3EXKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$91.40
FREE delivery for orders over HK$250.00
In Stock
- 40 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$45.70 | HK$91.40 |
| 10 - 98 | HK$44.90 | HK$89.80 |
| 100 - 248 | HK$44.10 | HK$88.20 |
| 250 - 498 | HK$43.25 | HK$86.50 |
| 500 + | HK$42.50 | HK$85.00 |
*price indicative
- RS Stock No.:
- 215-6661
- Mfr. Part No.:
- IKFW60N60DH3EXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 53A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 141W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Operating Temperature | 175°C | |
| Series | TRENCHSTOPTM Advanced Isolation | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 53A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 141W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Operating Temperature 175°C | ||
Series TRENCHSTOPTM Advanced Isolation | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon insulated-gate bipolar transistor copacked with rapid 1 fast and soft antiparallel diode in fully isolated package.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
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