Vishay, Type N-Channel IGBT, 3-Pin TO-247AC
- RS Stock No.:
- 180-7344
- Mfr. Part No.:
- SIHG47N60EF-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 25 units)*
HK$1,452.55
FREE delivery for orders over HK$250.00
Being discontinued
- Final 25 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | HK$58.102 | HK$1,452.55 |
| 50 - 75 | HK$56.839 | HK$1,420.98 |
| 100 + | HK$55.576 | HK$1,389.40 |
*price indicative
- RS Stock No.:
- 180-7344
- Mfr. Part No.:
- SIHG47N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | IGBT | |
| Maximum Power Dissipation Pd | 379W | |
| Package Type | TO-247AC | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 15.87 mm | |
| Length | 16.25mm | |
| Series | EF | |
| Energy Rating | 1500mJ | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type IGBT | ||
Maximum Power Dissipation Pd 379W | ||
Package Type TO-247AC | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 15.87 mm | ||
Length 16.25mm | ||
Series EF | ||
Energy Rating 1500mJ | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SIHG47N60EF is a N-channel EF series power MOSFET with fast body diode having drain to source voltage(Vds) of 600V and gate to source voltage (VGS) 30V. It is having TO-247AC package. It is offers drain to source resistance (RDS.) of 0.065ohms at 10VGS. Maximum drain current 47A.
Fast body diode MOSFET using E series technology
Reduced trr, Qrr, and IRRM
Low figure of merit (FOM) Ron x Qg
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