Infineon IKP20N60TXKSA1, Type N-Channel IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 170-2258
- Mfr. Part No.:
- IKP20N60TXKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
HK$864.50
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 500 unit(s) shipping from 22 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$17.29 | HK$864.50 |
| 100 - 150 | HK$16.772 | HK$838.60 |
| 200 + | HK$16.268 | HK$813.40 |
*price indicative
- RS Stock No.:
- 170-2258
- Mfr. Part No.:
- IKP20N60TXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 41A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 166W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Standards/Approvals | Pb-Free, JEDEC, RoHS | |
| Automotive Standard | No | |
| Energy Rating | 0.77mJ | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 41A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 166W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Standards/Approvals Pb-Free, JEDEC, RoHS | ||
Automotive Standard No | ||
Energy Rating 0.77mJ | ||
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses
Lowest V ce(sat) drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
Very soft, fast recovery anti-parallel Emitter Controlled Diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
Benefits:
Highest efficiency – low conduction and switching losses
Comprehensive portfolio in 600V and 1200V for flexibility of design
High device reliability
Target Applications:
UPS
Solar Inverters
Major Home Appliances
Welding
Air conditioning
Industrial Drives
Other hard switching applications
Related links
- Infineon 41 A 600 V Through Hole
- Infineon 41 A 600 V Through Hole
- Infineon IKW20N60TFKSA1 41 A 600 V Through Hole
- Infineon IGBT 3-Pin PG-TO263-3, Through Hole
- Infineon IKB20N60TATMA1 IGBT 3-Pin PG-TO263-3, Through Hole
- Vishay SiHP068N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SIHP068N60EF-GE3
- Vishay SiHB068N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB068N60EF-GE3
- Vishay SiHP068N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220