onsemi, N-Channel IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole
- RS Stock No.:
- 145-4338
- Mfr. Part No.:
- FGAF40N60UFTU
- Manufacturer:
- onsemi
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 30 - 30 | HK$19.993 | HK$599.79 | - |
| 60 - 90 | HK$19.56 | HK$586.80 | 2% |
| 120 + | HK$19.127 | HK$573.81 | 4% |
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- RS Stock No.:
- 145-4338
- Mfr. Part No.:
- FGAF40N60UFTU
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 100W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 130ns | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 23mm | |
| Series | UF | |
| Length | 26.5mm | |
| Height | 5.45mm | |
| Standards/Approvals | AEC, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 100W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 130ns | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 23mm | ||
Series UF | ||
Length 26.5mm | ||
Height 5.45mm | ||
Standards/Approvals AEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.