IXYS MIXA450PF1200TSF, Type N-Channel XPT IGBT Module, 450 A 1200 V, 11-Pin SimBus F, PCB
- RS Stock No.:
- 124-0712
- Mfr. Part No.:
- MIXA450PF1200TSF
- Manufacturer:
- IXYS
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 124-0712
- Mfr. Part No.:
- MIXA450PF1200TSF
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | XPT IGBT Module | |
| Maximum Continuous Collector Current Ic | 450A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 2100W | |
| Package Type | SimBus F | |
| Mount Type | PCB | |
| Channel Type | Type N | |
| Pin Count | 11 | |
| Switching Speed | 85ns | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 60747, RoHS | |
| Height | 17mm | |
| Length | 152mm | |
| Series | MIXA450PF1200TSF | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type XPT IGBT Module | ||
Maximum Continuous Collector Current Ic 450A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 2100W | ||
Package Type SimBus F | ||
Mount Type PCB | ||
Channel Type Type N | ||
Pin Count 11 | ||
Switching Speed 85ns | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 60747, RoHS | ||
Height 17mm | ||
Length 152mm | ||
Series MIXA450PF1200TSF | ||
Automotive Standard No | ||
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.