Infineon FS03MR12A7MA2BHPSA1, Type N-Channel Half Bridge IGBT, 310 A 1200 V HybridPACK Drive G2, Screw

View all IGBTs

Subtotal (1 unit)*

HK$18,084.00

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 30 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 +HK$18,084.00

*price indicative

RS Stock No.:
349-191
Mfr. Part No.:
FS03MR12A7MA2BHPSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

310A

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

6

Maximum Power Dissipation Pd

20mW

Configuration

Half Bridge

Package Type

HybridPACK Drive G2

Mount Type

Screw

Channel Type

Type N

Maximum Gate Emitter Voltage VGEO

19 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

200°C

Length

154.5mm

Standards/Approvals

RoHS, UL 94 V0

Width

100.5 mm

Automotive Standard

AQG 324

COO (Country of Origin):
DE
The Infineon Power module implements the second generation CoolSiC Automotive MOSFET 1200V. Its an optimized for electric drive train applications, from mid to high range automotive power classes to high range commercial, construction and agricultural vehicles.

High power density

Direct cooled PinFin base plate

Integrated temp sensing diode

PressFIT contact technology

Compact design

Higher temperature cycling capability

Integrated diode temperature sensors

New plastic material

Better temperature capability

Related links