Renesas Electronics HIP2101EIBZ MOSFET Gate Driver, 3 A 8-Pin 100 V, SOIC

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Subtotal (1 pack of 2 units)*

HK$59.40

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Units
Per unit
Per Pack*
2 - 8HK$29.70HK$59.40
10 - 48HK$29.10HK$58.20
50 - 98HK$28.50HK$57.00
100 - 248HK$27.65HK$55.30
250 +HK$26.80HK$53.60

*price indicative

Packaging Options:
RS Stock No.:
264-0589
Mfr. Part No.:
HIP2101EIBZ
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Product Type

Gate Driver Module

Output Current

3A

Pin Count

8

Package Type

SOIC

Fall Time

10ns

Driver Type

MOSFET

Rise Time

10ns

Minimum Supply Voltage

100V

Maximum Supply Voltage

100V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Series

HIP2101

Standards/Approvals

RoHS

Width

3.98 mm

Height

1.7mm

Automotive Standard

No

COO (Country of Origin):
PH
The Renesas Electronics gate drivers is a high frequency half-bridge NMOS FET driver with a tri-level PWM input with an operating supply and integrated high-side bootstrap bias, it supports driving the high-side and low-side NMOS in halfbridge applications.

Programmable dead-time prevents shoot-through

Bi-directional converter

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