Renesas Electronics MOSFET Gate Driver, 1.69 mA 10-Pin 100 V, SOIC

The image is for reference only, please refer to product details and specifications

View all Gate Drivers
Bulk discount available

Subtotal (1 tube of 750 units)*

HK$6,399.75

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 14 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
750 - 2250HK$8.533HK$6,399.75
3000 +HK$8.363HK$6,272.25

*price indicative

RS Stock No.:
264-3549
Mfr. Part No.:
HIP2210FRTZ
Manufacturer:
Renesas Electronics
Find similar products by selecting one or more attributes.
Select all

Brand

Renesas Electronics

Product Type

Gate Driver Module

Output Current

1.69mA

Pin Count

10

Package Type

SOIC

Fall Time

790ns

Driver Type

MOSFET

Rise Time

20ns

Minimum Supply Voltage

100V

Maximum Supply Voltage

100V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

RoHS

Series

HIP2210

Width

4 mm

Height

1.75mm

Length

5mm

Automotive Standard

No

The Renesas Electronics high-frequency half-bridge NMOS FET drivers. This is a tri-level PWM input with programmable dead time. Its wide operating supply range of 6V to

18V and integrated high-side bootstrap diodecsupports driving the high-side and low-side NMOS in 100V half-bridge applications.

Integrated 0.5Ω typical bootstrap diode

Robust noise tolerance

VDD and boot undervoltage lockout

Related links