Infineon 2ED21814S06JXUMA1, 2.5 A, 10 → 20V, DSO

The Infineon 650 V high and low side gate driver with high current, and high speed to drive MOSFET and IGBT, with typical 2.5 A sink and source current in DSO-14 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
High and Low Voltage Pins Separated for Maximum Creep age and Clearance
Separate logic and power ground

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