Infineon, Gate Driver, 600 mA 8-Pin 625 V, SOIC

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Subtotal (1 tube of 95 units)*

HK$833.625

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Units
Per unit
Per Tube*
95 - 95HK$8.775HK$833.63
190 - 190HK$8.599HK$816.91
285 - 475HK$8.427HK$800.57
570 - 950HK$8.175HK$776.63
1045 +HK$7.929HK$753.26

*price indicative

RS Stock No.:
257-5578
Mfr. Part No.:
IRS2103SPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Gate Driver

Output Current

600mA

Pin Count

8

Package Type

SOIC

Fall Time

35ns

Driver Type

Gate Driver

Rise Time

70ns

Minimum Supply Voltage

10V

Maximum Supply Voltage

625V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Series

IRS2103

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon half bridge driver is a high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

Floating gate driver designed for bootstrap operation

Fully operational to +600 V

Tolerant to negative transient voltage, dV/dt immune

Gate drive supply range from 10 V to 20 V

Under voltage lockout

33 V, 5 V, and 15 V logic input compatible

Cross-conduction prevention logic

Matched propagation delay for both channels

Internal set dead time

High-side output in phase with HIN input

Low-side output out of phase with LIN input


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