Infineon IR2010STRPBF MOSFET Gate Driver, 3 A 16-Pin 200V, SOIC
- RS Stock No.:
- 226-6148
- Mfr. Part No.:
- IR2010STRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 5 units)*
HK$151.10
FREE delivery for orders over HK$250.00
In Stock
- 30 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | HK$30.22 | HK$151.10 |
*price indicative
- RS Stock No.:
- 226-6148
- Mfr. Part No.:
- IR2010STRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power MOSFET & IGBT Driver | |
| Output Current | 3A | |
| Pin Count | 16 | |
| Package Type | SOIC | |
| Fall Time | 25ns | |
| Number of Outputs | 2 | |
| Driver Type | MOSFET | |
| Rise Time | 10ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 200V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 7.6mm | |
| Standards/Approvals | No | |
| Length | 10.5mm | |
| Height | 2.65mm | |
| Series | IR2010(S)PBF | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power MOSFET & IGBT Driver | ||
Output Current 3A | ||
Pin Count 16 | ||
Package Type SOIC | ||
Fall Time 25ns | ||
Number of Outputs 2 | ||
Driver Type MOSFET | ||
Rise Time 10ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 200V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 7.6mm | ||
Standards/Approvals No | ||
Length 10.5mm | ||
Height 2.65mm | ||
Series IR2010(S)PBF | ||
Mount Type Surface | ||
Automotive Standard No | ||
Infineon IR2010(S)PBF Series Power MOSFET & IGBT Driver, 10V Minimum Supply Voltage, 3A Output Current - IR2010STRPBF
This power MOSFET & IGBT driver is a dual-channel gate driver IC designed to drive power MOSFETs and IGBTs in high-voltage switching applications. It operates within industrial temperature extremes and supports use in surface-mounted assemblies, providing controlled gate drive currents and fast switching performance for power electronics systems.
Features and Benefits:
• Dual outputs deliver 3A Peak drive current for Faster switching
• 10V minimum supply enables operation from common gate rails
• 10ns rise time reduces transition losses during turn-on
• 25ns fall time limits switching stress on transistors
• 200V maximum supply provides high-voltage gate drive capability
• 16-pin SOIC package allows Compact surface mounting
• 10V minimum supply enables operation from common gate rails
• 10ns rise time reduces transition losses during turn-on
• 25ns fall time limits switching stress on transistors
• 200V maximum supply provides high-voltage gate drive capability
• 16-pin SOIC package allows Compact surface mounting
Applications
• Suitable for gate driving in inverter power stages
• Ideal for high-voltage switch control in converters
• Used with discrete MOSFET arrays in motor drives
• Can be used for IGBT gate control in power supplies
• Suitable for Compact surface-mounted power modules
• Ideal for high-voltage switch control in converters
• Used with discrete MOSFET arrays in motor drives
• Can be used for IGBT gate control in power supplies
• Suitable for Compact surface-mounted power modules
What temperature range can it operate within?
It functions across a wide ambient range from -55°C to 150°C, supporting deployment in thermally demanding environments.
What package and mounting style does it use?
The device is supplied in a 16-pin SOIC package intended for surface-mount assembly on PCBs.
How does its pin count affect PCB layout?
The 16-pin arrangement provides separate pins for dual outputs and control inputs, simplifying routing for isolated gate signals.
What physical profile should designers allow for height constraints?
The component has a total height of 2.65 mm, which should be considered when planning component stacking and enclosure clearances.
Related links
- Infineon MOSFET Gate Driver SOIC
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