Infineon 4 kB FRAM 8-Pin SOIC, FM24C04B-GTR
- RS Stock No.:
- 215-5779
- Mfr. Part No.:
- FM24C04B-GTR
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
HK$69.90
FREE delivery for orders over HK$250.00
In Stock
- 4,035 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 620 | HK$13.98 | HK$69.90 |
| 625 - 1245 | HK$13.68 | HK$68.40 |
| 1250 + | HK$13.36 | HK$66.80 |
*price indicative
- RS Stock No.:
- 215-5779
- Mfr. Part No.:
- FM24C04B-GTR
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | FRAM | |
| Memory Size | 4kB | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 10ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 1MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | No | |
| Length | 4.97mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | 85°C | |
| Automotive Standard | AEC-Q100 | |
| Minimum Operating Temperature | -40°C | |
| Number of Bits per Word | 8 | |
| Number of Words | 512 | |
| Minimum Supply Voltage | 4.5V | |
| Maximum Supply Voltage | 5.5V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type FRAM | ||
Memory Size 4kB | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 10ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 1MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals No | ||
Length 4.97mm | ||
Height 1.48mm | ||
Maximum Operating Temperature 85°C | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Temperature -40°C | ||
Number of Bits per Word 8 | ||
Number of Words 512 | ||
Minimum Supply Voltage 4.5V | ||
Maximum Supply Voltage 5.5V | ||
The Cypress Semiconductor FM24C04B is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories.
4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
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