Infineon 4 kB SPI FRAM 8-Pin SOIC
- RS Stock No.:
- 188-5409
- Mfr. Part No.:
- FM25040B-G
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 97 units)*
HK$1,346.845
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 10 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 97 - 97 | HK$13.885 | HK$1,346.85 |
| 194 - 291 | HK$13.537 | HK$1,313.09 |
| 388 + | HK$13.329 | HK$1,292.91 |
*price indicative
- RS Stock No.:
- 188-5409
- Mfr. Part No.:
- FM25040B-G
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | FRAM | |
| Memory Size | 4kB | |
| Organisation | 512 x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 20ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 20MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Length | 4.97mm | |
| Width | 3.98 mm | |
| Height | 1.38mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Automotive Standard | AEC-Q100 | |
| Number of Words | 512 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Supply Voltage | 4.5V | |
| Number of Bits per Word | 8 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type FRAM | ||
Memory Size 4kB | ||
Organisation 512 x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 20ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 20MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Length 4.97mm | ||
Width 3.98 mm | ||
Height 1.38mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Automotive Standard AEC-Q100 | ||
Number of Words 512 | ||
Minimum Operating Temperature -40°C | ||
Maximum Supply Voltage 5.5V | ||
Minimum Supply Voltage 4.5V | ||
Number of Bits per Word 8 | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
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- Infineon 4 kB Serial-SPI FRAM 8-Pin SOIC, FM25L04B-G
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