Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC, FM24W256-G
- RS Stock No.:
- 125-4217
- Mfr. Part No.:
- FM24W256-G
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
HK$37.20
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 4 unit(s) shipping from 23 March 2026
- Plus 960 unit(s) shipping from 21 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | HK$37.20 |
| 25 - 48 | HK$36.40 |
| 49 + | HK$35.60 |
*price indicative
- RS Stock No.:
- 125-4217
- Mfr. Part No.:
- FM24W256-G
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 256kB | |
| Product Type | FRAM | |
| Organisation | 32K x 8 Bit | |
| Interface Type | 2 Wire I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 3000ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 1MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Length | 4.97mm | |
| Height | 1.38mm | |
| Width | 3.98 mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Maximum Supply Voltage | 5.5V | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Minimum Supply Voltage | 2.7V | |
| Number of Words | 32k | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 256kB | ||
Product Type FRAM | ||
Organisation 32K x 8 Bit | ||
Interface Type 2 Wire I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 3000ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 1MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Length 4.97mm | ||
Height 1.38mm | ||
Width 3.98 mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Maximum Supply Voltage 5.5V | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
Minimum Supply Voltage 2.7V | ||
Number of Words 32k | ||
Automotive Standard AEC-Q100 | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
- Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC
- Infineon 256 kB Serial-I2C FRAM 8-Pin SOIC
- Infineon 256 kB Serial-I2C FRAM 8-Pin SOIC, FM24W256-GTR
- Infineon 64 kB 2 Wire I2C FRAM 8-Pin SOIC, FM24C64B-G
- Infineon 64 kB 2 Wire I2C FRAM 8-Pin SOIC
- Infineon 64 kB 2 Wire I2C FRAM 8-Pin SOIC, FM24CL64B-G
- Infineon 16 kB 2 Wire I2C FRAM 8-Pin SOIC, FM24CL16B-G
- Infineon 16 kB 2 Wire I2C FRAM 8-Pin SOIC