- RS Stock No.:
- 125-4212
- Mfr. Part No.:
- FM24CL16B-G
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
65 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 5)
HK$13.196
Units | Per unit | Per Pack* |
5 - 20 | HK$13.196 | HK$65.98 |
25 - 45 | HK$12.908 | HK$64.54 |
50 + | HK$12.628 | HK$63.14 |
*price indicative |
- RS Stock No.:
- 125-4212
- Mfr. Part No.:
- FM24CL16B-G
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.