Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

RS Stock No.:: 188-2785P
Mfr. Part No.:: W29N01HZBINA
Manufacturer:: Winbond

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

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Bulk discount available

Subtotal 55 units (supplied in a tray)*

HK$2,088.90

FREE delivery for orders over HK$250.00

In Stock

Plus 15 unit(s) shipping from 09 February 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
55 - 100	HK$37.98
105 +	HK$37.18

*price indicative

RS Stock No.:: 188-2785P
Mfr. Part No.:: W29N01HZBINA
Manufacturer:: Winbond

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Winbond
	Memory Size	1GB
	Product Type	Flash Memory
	Interface Type	Parallel
	Package Type	VFBGA
	Pin Count	63
	Organisation	128M x 8 Bit
	Mount Type	Surface
	Cell Type	SLC NAND
	Maximum Supply Voltage	1.95V
	Minimum Supply Voltage	1.7V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Width	11.1 mm
	Height	0.6mm
	Length	11.1mm
	Standards/Approvals	No
	Maximum Random Access Time	25μs
	Series	W29N01HZ
	Automotive Standard	No
	Supply Current	25mA
	Number of Words	128M
	Number of Bits per Word	8

	Select all
	Brand Winbond
	Memory Size 1GB
	Product Type Flash Memory
	Interface Type Parallel
	Package Type VFBGA
	Pin Count 63
	Organisation 128M x 8 Bit
	Mount Type Surface
	Cell Type SLC NAND
	Maximum Supply Voltage 1.95V
	Minimum Supply Voltage 1.7V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Width 11.1 mm
	Height 0.6mm
	Length 11.1mm
	Standards/Approvals No
	Maximum Random Access Time 25μs
	Series W29N01HZ
	Automotive Standard No
	Supply Current 25mA
	Number of Words 128M
	Number of Bits per Word 8

Datasheet W29N01HZBINA

COO (Country of Origin):: TW

Density : 1Gbit (Single chip solution)

Vcc : 1.7V to 1.95V

Bus width : x8 x16

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 1G-bit/128M-byte

Page size

2,112 bytes (2048 + 64 bytes)

1,056 words (1024 + 32 words)

Block size

64 pages (128K + 4K bytes)

64 pages (64K + 2K words)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command s

Additional command support

Copy Back

Lowest power consumption

Read: 13 mA(typ.)

Program/Erase:10mA(typ)

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

48-ball VFBGA

63-ball VFBGA

68-ball WLCSP

1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

FREE delivery for orders over HK$250.00

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