Toshiba RN2105(TE85L,F) Digital Transistor, -100 mA PNP, -50 V, 3-Pin ESM
- RS Stock No.:
- 540-6548
- Mfr. Part No.:
- RN2105(TE85L,F)
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
HK$4.20
FREE delivery for orders over HK$250.00
In Stock
- 255 unit(s) ready to ship from another location
- Plus 2,400 unit(s) shipping from 07 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | HK$0.84 | HK$4.20 |
| 25 - 120 | HK$0.82 | HK$4.10 |
| 125 - 245 | HK$0.80 | HK$4.00 |
| 250 - 495 | HK$0.78 | HK$3.90 |
| 500 + | HK$0.76 | HK$3.80 |
*price indicative
- RS Stock No.:
- 540-6548
- Mfr. Part No.:
- RN2105(TE85L,F)
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | Digital Transistor | |
| Maximum DC Collector Current Idc | -100mA | |
| Maximum Collector Emitter Voltage Vceo | -50V | |
| Package Type | ESM | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -50V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum DC Current Gain hFE | 80 | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 100mW | |
| Maximum Transition Frequency ft | 200MHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Series | RN2105 | |
| Width | 0.8mm | |
| Standards/Approvals | No | |
| Height | 0.7mm | |
| Length | 1.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type Digital Transistor | ||
Maximum DC Collector Current Idc -100mA | ||
Maximum Collector Emitter Voltage Vceo -50V | ||
Package Type ESM | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -50V | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum DC Current Gain hFE 80 | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 100mW | ||
Maximum Transition Frequency ft 200MHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Series RN2105 | ||
Width 0.8mm | ||
Standards/Approvals No | ||
Height 0.7mm | ||
Length 1.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
Transistor with Built-in Resistor, BRT Series, Toshiba
Built-in bias resistors, use of fewer parts enables device size reduction and space-saving assembly
Wide resistance-value range makes product suitable for diverse applications
Complementary to products from RN1101 / RN2101 to RN1118 / RN2118
Applications: switching, inverter circuits, interface circuits, driver circuits
SSM package
Digital Transistors, Toshiba
Resistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.
Related links
- Toshiba RN2101(TE85L -100 mA PNP 3-Pin ESM
- Toshiba RN2104(F) Digital Transistor -50 V, 3-Pin ESM
- Toshiba RN1107(TE85L 100 mA NPN 3-Pin ESM
- Toshiba RN1102(TE85L 100 mA NPN 3-Pin ESM
- Toshiba RN1106(TE85L 100 mA NPN 3-Pin ESM
- Toshiba RN1101(TE85L 100 mA NPN 3-Pin ESM
- Toshiba RN1105(TE85L 100 mA NPN 3-Pin ESM
- Toshiba RN1108(F) Digital Transistor 50 V, 3-Pin ESM