ROHM Bipolar Transistor, 500 mA NPN, 12 V, 6-Pin SOT-563
- RS Stock No.:
- 215-9739
- Mfr. Part No.:
- EMX18T2R
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 215-9739
- Mfr. Part No.:
- EMX18T2R
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 500mA | |
| Maximum Collector Emitter Voltage Vceo | 12V | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 270 | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Maximum Power Dissipation Pd | 150mW | |
| Transistor Polarity | NPN | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3mm | |
| Height | 550μm | |
| Series | EMX18 | |
| Standards/Approvals | No | |
| Length | 1.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 500mA | ||
Maximum Collector Emitter Voltage Vceo 12V | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 270 | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Maximum Power Dissipation Pd 150mW | ||
Transistor Polarity NPN | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Width 1.3mm | ||
Height 550μm | ||
Series EMX18 | ||
Standards/Approvals No | ||
Length 1.7mm | ||
Automotive Standard No | ||
The Rohm general purpose transistor having voltage rating of 12V. It is mainly used in low frequency amplifier. The transistor element is independent.
Mounting cost and area can be cut in half
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