onsemi Transistor, 10 A NPN, 400 V, 3-Pin TO-220
- RS Stock No.:
- 186-7374
- Mfr. Part No.:
- BUL45D2G
- Manufacturer:
- onsemi
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 186-7374
- Mfr. Part No.:
- BUL45D2G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 400V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 700V dc | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 75W | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 7 | |
| Maximum Emitter Base Voltage VEBO | 12V dc | |
| Maximum Transition Frequency ft | 1MHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 10.53mm | |
| Height | 15.75mm | |
| Standards/Approvals | No | |
| Width | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 400V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 700V dc | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 75W | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 7 | ||
Maximum Emitter Base Voltage VEBO 12V dc | ||
Maximum Transition Frequency ft 1MHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 10.53mm | ||
Height 15.75mm | ||
Standards/Approvals No | ||
Width 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
Integrated Collector-Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
Pb-Free Package is Available
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