Toshiba HN1A01FU-GR,LF(T Transistor, -150 mA PNP, -50 V, 6-Pin SOT-363
- RS Stock No.:
- 144-5302
- Mfr. Part No.:
- HN1A01FU-GR,LF(T
- Manufacturer:
- Toshiba
Bulk discount available
View bulk pricing optionsSubtotal (100 units, in packs of 100)*
HK$69.90
FREE delivery for orders over HK$250.00
In Stock
- 300 unit(s) ready to ship from another location
- Plus 2,900 unit(s) shipping from 09 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | HK$0.699 | HK$69.90 |
| 500 - 900 | HK$0.682 | HK$68.20 |
| 1000 - 4900 | HK$0.665 | HK$66.50 |
| 5000 - 9900 | HK$0.648 | HK$64.80 |
| 10000 + | HK$0.631 | HK$63.10 |
*price indicative
- RS Stock No.:
- 144-5302
- Mfr. Part No.:
- HN1A01FU-GR,LF(T
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -150mA | |
| Maximum Collector Emitter Voltage Vceo | -50V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Maximum Collector Base Voltage VCBO | -50V | |
| Maximum Transition Frequency ft | 80MHz | |
| Maximum Emitter Base Voltage VEBO | -5V | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 200mW | |
| Minimum DC Current Gain hFE | 120 | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Width | 1.25mm | |
| Length | 2mm | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -150mA | ||
Maximum Collector Emitter Voltage Vceo -50V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Maximum Collector Base Voltage VCBO -50V | ||
Maximum Transition Frequency ft 80MHz | ||
Maximum Emitter Base Voltage VEBO -5V | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 200mW | ||
Minimum DC Current Gain hFE 120 | ||
Pin Count 6 | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Width 1.25mm | ||
Length 2mm | ||
Height 0.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
Dual PNP/PNP Transistors, Toshiba
Bipolar Transistors, Toshiba
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