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    Bipolar Transistors

    Bipolar Transistors are a solid state, three-pin devices made from three layers of silicon. A bipolar transistor is designed to amplify current, bipolar transistors can also function as a switch. There are two main types of transistor, PNP (positive negative positive) or NPN (negative positive-negative).

    How a Bipolar transistor is made

    Bipolar transistors are constructed by joining two signal diodes back to back creating two PN junctions connected in series, sharing a common P or N terminal. By nature, silicon does not normally conduct electricity well. However, when silicon is treated with certain chemicals or impurities we can make the material and electrons behave in a different way. This process is called doping. The doping process improves the semiconductors ability to conduct electricity.

    How do bipolar transistors work?

    Bipolar transistors have two possible functions, switching, and amplification. Due to the devices three layers of doped semiconductor material, supplying the transistor with a signal voltage enables the discrete component to act as an insulator or a conductor. This clever change provides the transistors with two basic functions, switching (digital) electronics or amplification (analog) electronics.

    Transistors are available in panel, surface and through-hole mounting options in plastic package or metal can versions. All have three terminals or pins, the Base, the Collector, and the Emitter.

    They are also available as;

    • Digital transistors - are made of a semiconductor material, usually silicon, which conducts the current (or electricity) with little resistance. They also tend to have at least three terminals for easy connection to an external circuit.
    • UJT transistors - constructed of a bar of lightly dope N type silicone with a small piece of heavily doped P type material attached to one side. Since the silicon bar is lightly dope it has very high resistance.

    Applications of bipolar transistors?

    Transistors are one of the most widely used discrete components in electronic designs and circuits. Transistors are used for the amplification of all types of electrical signals in circuits made up of individual components rather than ICs (integrated circuits).

    5113 Products showing for Bipolar Transistors

    onsemi
    NPN
    15 A
    350 V
    TO-3PBL
    Through Hole
    230 W
    -
    Single
    350 V
    5 V
    35 MHz
    3
    1
    Sanyo
    PNP
    150 mA
    200 V
    TO-126
    Through Hole
    1.2 W
    -
    -
    200 V
    4 V
    400 MHz
    3
    1
    onsemi
    NPN
    200 mA
    40 V
    SOT-23
    Surface Mount
    300 mW
    100
    Single
    60 V
    6 V
    300 MHz
    3
    1
    onsemi
    NPN
    15 A
    350 V
    TO-3PBL
    Through Hole
    230 W
    -
    Single
    350 V
    5 V
    35 MHz
    3
    1
    onsemi
    PNP
    -1.5 A
    -80 V
    SOT-223 (SC-73)
    Surface Mount
    1.5 W
    40, 63, 100
    Single
    -100 V dc
    -5 V dc
    35 MHz
    3 + Tab
    1
    onsemi
    PNP
    200 mA
    40 V
    SOT-363 (SC-88)
    Surface Mount
    150 mW
    100
    Isolated
    -40 V
    -5 V
    1 kHz
    6
    2
    onsemi
    NPN
    -
    100 V
    TO-92
    Through Hole
    830 mW
    -
    Single
    -
    5 V
    -
    3
    1
    DiodesZetex
    NPN
    4 A
    45 V
    SOT-23F
    Surface Mount
    2 W
    500
    Single
    45 V
    7 V
    190 MHz
    3
    1
    onsemi
    NPN
    16 A
    250 V
    TO-204
    Through Hole
    250 W
    -
    Single
    400 V
    5 V
    4 MHz
    3
    1
    Nexperia
    PNP
    500 mA
    45 V
    SOT-23 (TO-236AB)
    Surface Mount
    250 mW
    160
    Single
    50 V
    5 V
    80 MHz
    3
    1
    STMicroelectronics
    NPN
    500 mA
    300 V
    SOT-32
    Through Hole
    2.8 W
    30
    Single
    300 V
    3 V
    -
    3
    1
    onsemi
    NPN
    200 mA
    40 V
    TO-92
    Through Hole
    625 mW
    100
    Single
    60 V
    6 V
    300 MHz
    3
    1
    onsemi
    PNP
    500 mA
    45 V
    SOT-23
    Surface Mount
    300 mW
    250
    Single
    50 V
    5 V
    100 MHz
    3
    1
    Infineon
    -
    65 mA
    20 V
    SOT-343
    Surface Mount
    -
    -
    -
    -
    -
    -
    4
    -
    Toshiba
    NPN
    12 A
    80 V
    TO-220SIS
    Through Hole
    30 W
    120
    Single
    80 V
    6 V
    80 MHz
    3
    1
    onsemi
    NPN
    600 mA
    160 V
    TO-92
    Through Hole
    625 mW
    -
    Single
    180 V
    6 V
    100 MHz
    3
    1
    STMicroelectronics
    NPN
    25 A
    100 V
    TO-247
    Through Hole
    125 W
    15
    Single
    100 V
    5 V
    3 MHz
    3
    1
    onsemi
    NPN
    200 mA
    40 V
    TO-92
    Through Hole
    625 mW
    -
    Single
    60 V
    6 V
    300 MHz
    3
    1
    onsemi
    NPN
    200 mA
    40 V
    SOT-23
    Surface Mount
    300 mW
    100
    Single
    60 V
    6 V
    300 MHz
    3
    1
    onsemi
    PNP
    -3 A
    -350 V
    TO-220
    Through Hole
    40 W
    30
    Single
    350 V dc
    5 V dc
    2 MHz
    3
    1
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