Infineon 4V 110mA, Dual Schottky Diode, 4-Pin SOT-143 BAT15099E6433HTMA1

The Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

RoHS compliant and halogen-free
Low capacitance and inductance

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