Infineon RF Amplifier Low Noise 18.1 dB, 6-Pin 2690 MHz TSNP
- RS Stock No.:
- 258-0656P
- Mfr. Part No.:
- BGA5H1BN6E6327XTSA1
- Manufacturer:
- Infineon
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 258-0656P
- Mfr. Part No.:
- BGA5H1BN6E6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Amplifier Type | Low Noise | |
| Product Type | RF Amplifier | |
| Operating Frequency | 2690 MHz | |
| Technology | Silicon Germanium | |
| Gain | 18.1dB | |
| Package Type | TSNP | |
| Minimum Supply Voltage | 1.5V | |
| Maximum Supply Voltage | 3.6V | |
| Pin Count | 6 | |
| Noise Figure | 1.2dB | |
| Minimum Operating Temperature | -40°C | |
| Third Order Intercept OIP3 | -6dBm | |
| P1dB - Compression Point | 60mW | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Series | BGA5H1BN6 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Amplifier Type Low Noise | ||
Product Type RF Amplifier | ||
Operating Frequency 2690 MHz | ||
Technology Silicon Germanium | ||
Gain 18.1dB | ||
Package Type TSNP | ||
Minimum Supply Voltage 1.5V | ||
Maximum Supply Voltage 3.6V | ||
Pin Count 6 | ||
Noise Figure 1.2dB | ||
Minimum Operating Temperature -40°C | ||
Third Order Intercept OIP3 -6dBm | ||
P1dB - Compression Point 60mW | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
Series BGA5H1BN6 | ||
The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count