Vishay 200V 1A, Fast Recovery Epitaxial Diode Diode, 2-Pin DO-219AB VS-1EFH02-M3/I

RS Stock No.:: 165-4913
Mfr. Part No.:: VS-1EFH02-M3/I
Manufacturer:: Vishay

Vishay 200V 1A, Fast Recovery Epitaxial Diode Diode, 2-Pin DO-219AB VS-1EFH02-M3/I

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On back order for despatch 22/07/2024, delivery within 3 working days

Added

Price Each (On a Reel of 10000)

HK$0.68

Units	Per unit	Per Reel*
10000 - 40000	HK$0.68	HK$6,800.00
50000 +	HK$0.666	HK$6,660.00
*price indicative

RS Stock No.:: 165-4913
Mfr. Part No.:: VS-1EFH02-M3/I
Manufacturer:: Vishay

Product overview and Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

FRED Pt® Hyperfast Recovery Rectifiers

The FRED Pt® (Fast Recovery Epitaxial Diode) range of products from Vishay are hyperfast diodes containing platinum (Pt) doping technology. This series offers extremely low leakage currents at high temperatures together with a high maximum junction operating temperature of 175°C. Typical recovery times are 35nds or less.

Range Features

Range Features
V_RRM from 200V to 600V
Lowest Q_rr at 125°C
Lowest V_F at I_F
Improved efficiency in switched mode power supplies
Soft recovery for reduced EMI at high dI_F/dt
T_J (max) 175 °C
AEC-Q101 qualified

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Diodes and Rectifiers, Vishay Semiconductor

Specifications

Attribute	Value
Mounting Type	Surface Mount
Package Type	DO-219AB
Maximum Continuous Forward Current	1A
Peak Reverse Repetitive Voltage	200V
Diode Configuration	Single
Rectifier Type	General Purpose
Diode Type	Fast Recovery Epitaxial Diode
Pin Count	2
Maximum Forward Voltage Drop	930mV
Number of Elements per Chip	1
Diode Technology	Silicon Junction
Peak Reverse Recovery Time	23ns
Peak Non-Repetitive Forward Surge Current	35A