Infineon 1200V 19.1A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH05G120C5XKSA1
- RS Stock No.:
- 133-9857
- Mfr. Part No.:
- IDH05G120C5XKSA1
- Manufacturer:
- Infineon
Discontinued product
- RS Stock No.:
- 133-9857
- Mfr. Part No.:
- IDH05G120C5XKSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
Specifications
Attribute | Value |
|---|---|
| Mounting Type | Through Hole |
| Package Type | TO-220 |
| Maximum Continuous Forward Current | 19.1A |
| Peak Reverse Repetitive Voltage | 1200V |
| Diode Configuration | Single |
| Diode Type | SiC Schottky |
| Pin Count | 2 + Tab |
| Maximum Forward Voltage Drop | 2.6V |
| Number of Elements per Chip | 1 |
| Diode Technology | SiC Schottky |
| Peak Non-Repetitive Forward Surge Current | 59A |