Silicon N-Channel MOSFET, 111 A, 650 V, 3-Pin TO-247 Infineon IPW60R018CFD7XKSA1
- RS Stock No.:
- 222-4719
- Mfr. Part No.:
- IPW60R018CFD7XKSA1
- Manufacturer:
- Infineon
On back order for despatch 25/04/2025, delivery within 3 working days
Added
Price Each
HK$160.98
| Units | Per unit |
| 1 - 9 | HK$160.98 |
| 10 - 99 | HK$156.96 |
| 100 - 249 | HK$153.03 |
| 250 - 499 | HK$149.20 |
| 500 + | HK$145.48 |
- RS Stock No.:
- 222-4719
- Mfr. Part No.:
- IPW60R018CFD7XKSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Pb-free lead plating
RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 111 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Series | CoolMOS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.018 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Number of Elements per Chip | 1 |
| Transistor Material | Silicon |