Microchip High Performance SiC Gate Driver Core MOSFET for 2-Channel Gate Driver Core for Charging, Electric Vehicles,

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HK$1,346.00

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Being discontinued
  • Final 7 unit(s), ready to ship from another location
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1 - 4HK$1,346.00
5 +HK$1,319.10

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RS Stock No.:
205-2350
Mfr. Part No.:
2ASC-12A1HP
Manufacturer:
Microchip
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Brand

Microchip

Product Type

Evaluation Board

Power Management Function

MOSFET

For Use With

Charging, Electric Vehicles, Auxiliary Power Unit, Storage and Inverter

Kit Classification

Evaluation Board

Featured Device

2-Channel Gate Driver Core

Kit Name

High Performance SiC Gate Driver Core

Standards/Approvals

ISO

The Microchip AgileSwitch 1200V dual-channel augmented high performance SiC core 1 enables better control and protection of most SiC MOSFET-based power systems. It provides up to 10A of peak current at an operating frequency of 100kHz. The high CMTI gate drive core includes an isolated DC/DC converter and low capacitance isolation barrier for PWM signals and fault feedback. The Intelligent Configuration Tool (ICT) will allow users to appropriately configure the Gate Driver Parameters to their application without having to worry about changing hardware.

Robust High-Noise-Immunity Design

Isolated Temperature Monitoring, PWM

Isolated High Voltage Monitoring, PWM

Compact 40mm x 61mm form factor

2 X 3W output power

Up to 7 unique fault conditions

Power supply under-voltage lockout (UVLO)

Power supply over-voltage lockout (OVLO)

Desaturation detection settings

Dead time

Fault lockout settings

Automatic reset settings

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