MPN

Diodes Inc Dual N-Channel MOSFET, 6 A, 24 V, 4-Pin X1-WLB1818 DMN2023UCB4-7

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Bulk discount available

Subtotal 760 units (supplied on a reel)*

HK$3,321.20

Temporarily out of stock

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
760 - 1480	HK$4.37
1500 +	HK$4.305

*price indicative

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	N
	Maximum Continuous Drain Current	6 A
	Maximum Drain Source Voltage	24 V
	Package Type	X1-WLB1818
	Mounting Type	Surface Mount
	Pin Count	4
	Maximum Drain Source Resistance	40 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.3V
	Minimum Gate Threshold Voltage	0.5V
	Maximum Power Dissipation	1.45 W
	Transistor Configuration	Common Drain
	Maximum Gate Source Voltage	-12 V, +12 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Length	1.8mm
	Typical Gate Charge @ Vgs	29 nC @ 4.5 V
	Number of Elements per Chip	2
	Width	1.8mm
	Height	0.24mm
	Forward Diode Voltage	1V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand DiodesZetex
	Channel Type N
	Maximum Continuous Drain Current 6 A
	Maximum Drain Source Voltage 24 V
	Package Type X1-WLB1818
	Mounting Type Surface Mount
	Pin Count 4
	Maximum Drain Source Resistance 40 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.3V
	Minimum Gate Threshold Voltage 0.5V
	Maximum Power Dissipation 1.45 W
	Transistor Configuration Common Drain
	Maximum Gate Source Voltage -12 V, +12 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Length 1.8mm
	Typical Gate Charge @ Vgs 29 nC @ 4.5 V
	Number of Elements per Chip 2
	Width 1.8mm
	Height 0.24mm
	Forward Diode Voltage 1V
	Minimum Operating Temperature -55 °C

MOSFET Transistors, Diodes Inc.