IXYS Type N-Channel MOSFET, 132 A, 500 V Enhancement, 3-Pin PLUS264
- RS Stock No.:
- 920-0984
- Mfr. Part No.:
- IXFB132N50P3
- Manufacturer:
- IXYS
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 25 units)*
HK$3,886.90
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 09 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | HK$155.476 | HK$3,886.90 |
| 50 - 75 | HK$152.096 | HK$3,802.40 |
| 100 + | HK$148.716 | HK$3,717.90 |
*price indicative
- RS Stock No.:
- 920-0984
- Mfr. Part No.:
- IXFB132N50P3
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 132A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | PLUS264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 250nC | |
| Maximum Power Dissipation Pd | 1.89kW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 20.29mm | |
| Height | 26.59mm | |
| Width | 5.31 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 132A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type PLUS264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 250nC | ||
Maximum Power Dissipation Pd 1.89kW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 20.29mm | ||
Height 26.59mm | ||
Width 5.31 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin PLUS264 IXFB132N50P3
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin PLUS264
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin PLUS264
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 3-Pin PLUS264
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin PLUS264 IXFB110N60P3
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin PLUS264 IXFB210N30P3
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 3-Pin PLUS264 IXFB90N85X
- IXYS Single HiperFET 82 A 3-Pin PLUS264 IXFB82N60Q3