Dual N-Channel MOSFET, 5.4 A, 20 V, 8-Pin MSOP Infineon IRF7530TRPBF
- RS Stock No.:
- 919-4729
- Mfr. Part No.:
- IRF7530TRPBF
- Manufacturer:
- Infineon
4000 In stock for delivery within 3 working days
Added
Price Each (On a Reel of 4000)
HK$2.994
| Units | Per unit | Per Reel* |
| 4000 - 16000 | HK$2.994 | HK$11,976.00 |
| 20000 + | HK$2.934 | HK$11,736.00 |
| *price indicative | ||
- RS Stock No.:
- 919-4729
- Mfr. Part No.:
- IRF7530TRPBF
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- TH
Product Details
Dual N-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.4 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | MSOP |
| Series | HEXFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 30 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.2V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 1.3 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Length | 3mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Width | 3mm |
| Typical Gate Charge @ Vgs | 18 nC @ 4.5 V |
| Height | 0.86mm |
| Minimum Operating Temperature | -55 °C |