Vishay IRFBG30 Type N-Channel Power MOSFET, 3.1 A, 1 kV Enhancement, 3-Pin TO-220AB IRFBG30PBF
- RS Stock No.:
- 919-4508
- Mfr. Part No.:
- IRFBG30PBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
HK$631.20
FREE delivery for orders over HK$250.00
In Stock
- Plus 750 unit(s) shipping from 24 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$12.624 | HK$631.20 |
| 100 - 150 | HK$12.35 | HK$617.50 |
| 200 + | HK$12.074 | HK$603.70 |
*price indicative
- RS Stock No.:
- 919-4508
- Mfr. Part No.:
- IRFBG30PBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-220AB | |
| Series | IRFBG30 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-220AB | ||
Series IRFBG30 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Height 9.01mm | ||
Length 10.41mm | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRFBG30 Series Power MOSFET, 1000V Drain Source Voltage, 3.1A Continuous Drain Current - IRFBG30PBF
This power MOSFET is a high-voltage N-channel device intended for switching and power-control roles in industrial electronics. It is a through-hole component supplied in a TO-220AB package designed for applications requiring substantial power handling and high drain-to-source voltage capability.
Features and Benefits:
• 1000V drain-to-source rating enables high-voltage switching
• 3.1A continuous drain current supports moderate load currents
• 125W power dissipation allows elevated power handling
• 5Ω maximum Rds minimises conduction losses under load
• 80nC typical gate charge permits predictable gate-drive sizing
• 150°C maximum operating temperature sustains high-heat environments
• 3.1A continuous drain current supports moderate load currents
• 125W power dissipation allows elevated power handling
• 5Ω maximum Rds minimises conduction losses under load
• 80nC typical gate charge permits predictable gate-drive sizing
• 150°C maximum operating temperature sustains high-heat environments
Applications
• Suitable for high-voltage power converters in automation systems
• Ideal for motor drive front-ends in electrical equipment
• Used for industrial switching in control assemblies
• Can be used for protection circuits requiring high Vds
• Used with discrete power stages in mechanical actuation systems
• Ideal for motor drive front-ends in electrical equipment
• Used for industrial switching in control assemblies
• Can be used for protection circuits requiring high Vds
• Used with discrete power stages in mechanical actuation systems
What gate drive margin is permissible for safe operation?
The device can tolerate gate-source voltages up to 20V, so design gate drivers to operate within that range.
How does the package influence thermal management?
The TO-220AB through-hole package permits direct heatsinking to manage the 125W dissipation under appropriate mounting and cooling conditions.
What environmental temperature range can it withstand?
It operates reliably between -55°C and 150°C, accommodating wide industrial temperature extremes.
What pin configuration should designers expect?
The component is a three-pin through-hole device, compatible with standard PCB layouts for discrete power components.
Related links
- Vishay IRFBG30 Type N-Channel Power MOSFET 1 kV Enhancement, 3-Pin TO-220AB IRFBG30PBF
- Vishay IRFR320 Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-252
- Vishay IRFR320 Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-252 IRFR320TRPBF
- Vishay EF Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220AB
- Vishay IRF510 Type N-Channel Power MOSFET 100 V Enhancement, 3-Pin TO-220AB
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB
- Vishay IRF820 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB
- Vishay IRFBC20 Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220AB