Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS120M12BM2
- RS Stock No.:
- 916-3879
- Mfr. Part No.:
- CAS120M12BM2
- Manufacturer:
- Wolfspeed
10 In stock for delivery within 3 working days
Added
Price Each
HK$4,242.79
| Units | Per unit |
| 1 - 2 | HK$4,242.79 |
| 3 - 4 | HK$4,136.73 |
| 5 + | HK$4,073.07 |
- RS Stock No.:
- 916-3879
- Mfr. Part No.:
- CAS120M12BM2
- Manufacturer:
- Wolfspeed
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 193 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | Half Bridge |
| Mounting Type | Screw Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 30 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.6V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 925 W |
| Transistor Configuration | Series |
| Maximum Gate Source Voltage | -10 V, +25 V |
| Number of Elements per Chip | 2 |
| Width | 61.4mm |
| Typical Gate Charge @ Vgs | 378 nC @ 20 V |
| Transistor Material | SiC |
| Maximum Operating Temperature | +150 °C |
| Length | 106.4mm |
| Height | 30mm |
| Forward Diode Voltage | 2.4V |
| Minimum Operating Temperature | -40 °C |