SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J
- RS Stock No.:
- 915-8833P
- Mfr. Part No.:
- C2M1000170J
- Manufacturer:
- Wolfspeed
24 In stock for delivery within 3 working days
Added
Price Each (Supplied in a Tube)
HK$81.875
| Units | Per unit |
| 14 - 24 | HK$81.875 |
| 26 + | HK$80.605 |
- RS Stock No.:
- 915-8833P
- Mfr. Part No.:
- C2M1000170J
- Manufacturer:
- Wolfspeed
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.3 A |
| Maximum Drain Source Voltage | 1700 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 1.4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 78 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -10 V, +25 V |
| Length | 10.23mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 13 nC @ 20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
| Width | 10.99mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 3.8V |
| Height | 4.57mm |