N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB200N25N3GATMA1

RS Stock No.:: 898-6870P
Mfr. Part No.:: IPB200N25N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB200N25N3GATMA1

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Price Each (Supplied on a Reel)**. Quantities below 150 on continuous strip

HK$60.805

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Units	Per unit
250 - 498	HK$59.28
500 +	HK$58.37

**price indicative

RS Stock No.:: 898-6870P
Mfr. Part No.:: IPB200N25N3GATMA1
Manufacturer:: Infineon

OptiMOS Power Transistor IPB200N25N3
Efficient Semiconductor Solutions for Motor Control and Drives
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	64 A
Maximum Drain Source Voltage	250 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	20 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	64 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Width	9.45mm
Number of Elements per Chip	1
Length	10.31mm
Height	4.57mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB200N25N3GATMA1

FREE delivery for orders over HK$850.00

Summary of Features

Benefits

Potential Applications