N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS Toshiba TK16A60W,S4VX(M
- RS Stock No.:
- 891-2901
- Mfr. Part No.:
- TK16A60W,S4VX(M
- Manufacturer:
- Toshiba
15 In Global stock for delivery within 3 working day(s)
235 In Global stock for delivery within 3 working day(s)
Added
Price Each (In a Pack of 5)
HK$15.416
| Units | Per unit | Per Pack* |
| 5 - 10 | HK$15.416 | HK$77.08 |
| 15 - 20 | HK$14.988 | HK$74.94 |
| 25 + | HK$14.37 | HK$71.85 |
| *price indicative | ||
- RS Stock No.:
- 891-2901
- Mfr. Part No.:
- TK16A60W,S4VX(M
- Manufacturer:
- Toshiba
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 15.8 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220SIS |
| Series | TK |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 190 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Power Dissipation | 40 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 10mm |
| Width | 4.5mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Height | 15mm |
| Forward Diode Voltage | 1.7V |