- RS Stock No.:
- 827-6182P
- Mfr. Part No.:
- TK31E60W,S1VX(S
- Manufacturer:
- Toshiba
12 In stock for delivery within 3 working days
Added
Price Each (Supplied in a Bag)
HK$40.125
Units | Per unit |
10 - 18 | HK$40.125 |
20 - 48 | HK$39.125 |
50 - 98 | HK$38.15 |
100 + | HK$37.19 |
- RS Stock No.:
- 827-6182P
- Mfr. Part No.:
- TK31E60W,S1VX(S
- Manufacturer:
- Toshiba
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
MOSFET N-Channel, TK3x Series, Toshiba
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 31 A |
Maximum Drain Source Voltage | 600 V |
Series | TK |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 88 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.7V |
Maximum Power Dissipation | 230 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Typical Gate Charge @ Vgs | 86 nC @ 10 V |
Length | 10.16mm |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Width | 4.45mm |
Number of Elements per Chip | 1 |
Height | 15.1mm |