N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S

RS Stock No.:: 827-6097P
Mfr. Part No.:: TK100A06N1,S4X(S
Manufacturer:: Toshiba

N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S

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RS Stock No.:: 827-6097P
Mfr. Part No.:: TK100A06N1,S4X(S
Manufacturer:: Toshiba

TK100A06N1, MOSFET Silicon N-Channel MOS (U-MOS VIII-H)
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	60 V
Series	TK
Package Type	TO-220SIS
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	4.5mm
Typical Gate Charge @ Vgs	140 nC @ 10 V
Transistor Material	Si
Number of Elements per Chip	1
Length	10mm
Height	15mm