Texas Instruments NexFET N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON CSD16301Q2
- RS Stock No.:
- 827-4672P
- Mfr. Part No.:
- CSD16301Q2
- Manufacturer:
- Texas Instruments
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Subtotal 750 units (supplied on a reel)*
HK$2,167.50
FREE delivery for orders over HK$250.00
In Stock
- 37,240 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 750 - 1490 | HK$2.89 |
| 1500 + | HK$2.84 |
*price indicative
- RS Stock No.:
- 827-4672P
- Mfr. Part No.:
- CSD16301Q2
- Manufacturer:
- Texas Instruments
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | WSON | |
| Series | NexFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 34 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.55V | |
| Minimum Gate Threshold Voltage | 0.9V | |
| Maximum Power Dissipation | 2.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 2 nC @ 4.5 V | |
| Width | 2mm | |
| Number of Elements per Chip | 1 | |
| Length | 2mm | |
| Height | 0.8mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 25 V | ||
Package Type WSON | ||
Series NexFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 34 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.55V | ||
Minimum Gate Threshold Voltage 0.9V | ||
Maximum Power Dissipation 2.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 2 nC @ 4.5 V | ||
Width 2mm | ||
Number of Elements per Chip 1 | ||
Length 2mm | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel NexFET™ Power MOSFET, Texas Instruments
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MOSFET Transistors, Texas Instruments