N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

RS Stock No.:: 825-9235P
Mfr. Part No.:: IPB027N10N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

Price Each (Supplied on a Reel)**. Quantities below 150 on continuous strip

HK$30.07

4352 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit
250 - 498	HK$29.315
500 +	HK$28.865

**price indicative

RS Stock No.:: 825-9235P
Mfr. Part No.:: IPB027N10N3GATMA1
Manufacturer:: Infineon

IPB027N10N3 G, OptiMOS3 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS™ 3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	4.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.31mm
Width	9.45mm
Typical Gate Charge @ Vgs	155 nC @ 10 V
Number of Elements per Chip	1
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

FREE delivery for orders over HK$850.00

Infineon OptiMOS™3 Power MOSFETs, 100V and over