Vishay SiHFBC30AS Type N-Channel MOSFET, 3.6 A, 600 V Enhancement, 3-Pin TO-263 SIHFBC30AS-GE3

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Subtotal (1 pack of 10 units)*

HK$122.70

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Units
Per unit
Per Pack*
10 - 10HK$12.27HK$122.70
20 - 20HK$11.96HK$119.60
30 +HK$11.78HK$117.80

*price indicative

Packaging Options:
RS Stock No.:
815-2698
Mfr. Part No.:
SIHFBC30AS-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

600V

Series

SiHFBC30AS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.2Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23nC

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

74W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

9.65 mm

Height

4.83mm

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor


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