N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK Vishay SIHF640L-GE3

RS Stock No.:: 815-2635P
Mfr. Part No.:: SIHF640L-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK Vishay SIHF640L-GE3

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Bulk discount available

Subtotal (2 reels of 10 units)**. Quantities below 150 on continuous strip

HK$304.34

On back order for despatch 31/05/2025, delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit
20 +	HK$14.836

**price indicative

RS Stock No.:: 815-2635P
Mfr. Part No.:: SIHF640L-GE3
Manufacturer:: Vishay

IRF640S, IRF640L, SiHF640S, SiHF640L, Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Package Type	I2PAK (TO-262)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	180 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	130 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	10.67mm
Transistor Material	Si
Width	4.83mm
Typical Gate Charge @ Vgs	70 nC @ 10 V
Maximum Operating Temperature	+150 °C
Height	11.3mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK Vishay SIHF640L-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor