N-Channel MOSFET, 9 A, 200 V, 3-Pin D2PAK Vishay SIHF630STRL-GE3

RS Stock No.:: 815-2623P
Mfr. Part No.:: SIHF630STRL-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 9 A, 200 V, 3-Pin D2PAK Vishay SIHF630STRL-GE3

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Price Each (Supplied on a Reel)**. Quantities below 150 on continuous strip

HK$10.159

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FREE delivery for orders over HK$850.00

Units	Per unit
200 - 390	HK$9.905
400 +	HK$9.753

**price indicative

RS Stock No.:: 815-2623P
Mfr. Part No.:: SIHF630STRL-GE3
Manufacturer:: Vishay

IRF630S, SiHF630S, Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	400 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	74 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.65mm
Typical Gate Charge @ Vgs	43 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	10.67mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	4.83mm

N-Channel MOSFET, 9 A, 200 V, 3-Pin D2PAK Vishay SIHF630STRL-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor