Vishay SiHF630S Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-263 SIHF630STRL-GE3

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Subtotal (1 pack of 10 units)*

HK$101.59

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Units
Per unit
Per Pack*
10 - 190HK$10.159HK$101.59
200 - 390HK$9.905HK$99.05
400 +HK$9.753HK$97.53

*price indicative

Packaging Options:
RS Stock No.:
815-2623
Mfr. Part No.:
SIHF630STRL-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

200V

Series

SiHF630S

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2V

Typical Gate Charge Qg @ Vgs

43nC

Maximum Power Dissipation Pd

74W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.67mm

Width

9.65 mm

Height

4.83mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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