N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SIR416DP-T1-GE3

RS Stock No.:: 814-1272P
Mfr. Part No.:: SIR416DP-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SIR416DP-T1-GE3

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Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

HK$8.28

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Units	Per unit
10 +	HK$8.28

RS Stock No.:: 814-1272P
Mfr. Part No.:: SIR416DP-T1-GE3
Manufacturer:: Vishay

SiR416DP, N-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	27 A
Maximum Drain Source Voltage	40 V
Package Type	PowerPAK SO-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	4.2 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	69 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	6.25mm
Typical Gate Charge @ Vgs	59 nC @ 10 V
Transistor Material	Si
Width	5.26mm
Minimum Operating Temperature	-55 °C
Height	1.12mm

N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SIR416DP-T1-GE3

FREE delivery for orders over HK$850.00

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