P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3

RS Stock No.:: 812-3139P
Mfr. Part No.:: SI2365EDS-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3

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Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

HK$1.672

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Units	Per unit
750 - 1450	HK$1.63
1500 +	HK$1.606

RS Stock No.:: 812-3139P
Mfr. Part No.:: SI2365EDS-T1-GE3
Manufacturer:: Vishay

Si2365EDS, P-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	4.7 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	67.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.7 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Operating Temperature	+150 °C
Length	3.04mm
Typical Gate Charge @ Vgs	23.8 nC @ 8 V
Width	1.4mm
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-50 °C
Height	1.02mm

P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3

FREE delivery for orders over HK$850.00

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor